首页 >PHKD3NQ10T-VB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualN-channelTrenchMOSstandardlevelFET 1.1Generaldescription DualstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefit | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DualN-channelTrenchMOStransistor GENERALDESCRIPTION DualN-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Dualdevice •Lowon-stateresistance •Fastswitching •Lowprofilesurfacemountpackage Applications:- •Motorandrelaydrivers •d.c.tod.c.conver | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
