首页 >PHK4NQ10T其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel100-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplications. 1.2Featuresandbenefits Lowcond | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHT4NQ10LTinSOT223. Features ■TrenchMOS™technology ■Fastswitching ■Lowon-stateresistance ■Surfacemountpackage ■Logiclevelcompatible. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOS™standardlevelFET 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability: PHT4NQ10TinSOT223. 2.Features nTrenchMOS™technology nVeryfastswitching nSurfacemountpackage. 3.Applications nPrimarysideswitchinDCto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-Channel100-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Veryfastswitching ■Surfacemountpackage. Applications ■PrimarysideswitchinDCtoDCconverters ■Highspeedlinedriver ■Fastgener | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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