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PHD9NQ20T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD9NQ20T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits H

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHD9NQ20T

N-channelTrenchMOStransistor

VDSS=200V ID=8.7A RDS(ON)≤400mΩ GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsa

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHF9NQ20

N-channelTrenchMOStransistor

VDSS=200V ID=5.2A RDS(ON)≤400mΩ GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrol

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHF9NQ20T

N-channelTrenchMOStransistor

VDSS=200V ID=5.2A RDS(ON)≤400mΩ GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrol

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHF9NQ20T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP9NQ20T

N-channelTrenchMOStransistor

VDSS=200V ID=8.7A RDS(ON)≤400mΩ GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsa

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHX9NQ20T

N-channelTrenchMOStransistor

VDSS=200V ID=5.2A RDS(ON)≤400mΩ GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrol

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

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