首页 >PHD44N06LTMOS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES •’Trench’ | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES •’Trench’ | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-252(DPAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES •’Trench’ | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES •’Trench’ | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
NXP/恩智浦 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
PHILIPS/飞利浦 |
21+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
N |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
- |
23+ |
NA |
125800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
N |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
询价 | ||
N |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
N |
25+ |
TO-252 |
53200 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
24+ |
TO-252 |
3000 |
询价 | ||||
PHI |
24+ |
TO-252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |
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