首页 >PHD3055EMOS()>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intend | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly Featuresandbenefits ■Lowconduct | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching • | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFET짰PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
PHILIPS/飞利浦 |
21+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
NXP/恩智浦 |
05+ |
TO252 |
365 |
格局大点,眼光长点 |
询价 | ||
NXP/恩智浦 |
24+ |
TO252 |
42000 |
只做原装进口现货 |
询价 | ||
NXP |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
NXP |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
PHILIPS |
1709+ |
TO-252/D- |
32500 |
普通 |
询价 | ||
NXP/恩智浦 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
NXP |
23+ |
SOT252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
N |
SOT428(D |
22+ |
6000 |
十年配单,只做原装 |
询价 |
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