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PHB21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHB21N06LT

N-channelTrenchMOSÔtransistorLogiclevelFET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHB21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB21N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB21N06T

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHD21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD21N06LT

N-channelTrenchMOSÔtransistorLogiclevelFET

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHD21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHD21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

供应商型号品牌批号封装库存备注价格
NXP
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
N
22+
SOT428(D
6000
十年配单,只做原装
询价
N
23+
SOT428(D
6000
原装正品,支持实单
询价
PHILIPS/飞利浦
2022+
SOT428(D-PAK)
48000
只做原装,原装,假一罚十
询价
PHILIPS/飞利浦
22+
SOT-252
20000
保证原装正品,假一陪十
询价
PHILIPS/飞利浦
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
PHILIPS/飞利浦
23+
TO-252
89630
当天发货全新原装现货
询价
PH
24+
SOT428TO-252
8866
询价
NXP
2016+
TO252
6523
只做原装正品现货!或订货!
询价
NXP
2020+
TO-252
67
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多PHD21N06T供应商 更新时间2025-5-21 14:55:00