首页 >PHD101NQ03LTIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TrenchMOS??logiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-channelTrenchMOSlogiclevelFET Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconductio | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
TrenchMOS??logiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=75A@TC=25℃ DrainSourceVoltage-VDSS=30V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelTrenchMOSlogiclevelFET Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconductio | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
TrenchMOSlogiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP101NQ03LTinSOT78(TO-220AB) PHU101NQ03LTinSOT533(I-PAK) Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
PHILIPS/飞利浦 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NXP/恩智浦 |
23+ |
TO-252 |
28942 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
询价 | ||
PHILIPS/飞利浦 |
21+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
NXP/恩智浦 |
22+ |
DPAK |
16197 |
询价 | |||
NXP/恩智浦 |
24+ |
TO-252 |
60000 |
全新原装现货 |
询价 | ||
PHILIPS |
24+ |
TO-252 |
70000 |
询价 | |||
N |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
N |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
询价 | ||
N |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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