PHD101NQ03LT

TrenchMOS??logic level FET

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas

PHD101NQ03LT

N-channel TrenchMOS logic level FET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconductio

PHD101NQ03LT

N-channel TrenchMOS logic level FET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

PHD101NQ03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHFM101

1.0ASurfaceMountHighEffciencyRectifiers-50V-1000V

PIC101A

ProcessIndicator

PIC101N

BasicProcessIndicator

PIC101N-CU

BasicProcessIndicator

PLR101

PLASTICFIBEROPTICLINK

DESCRIPTION PLM101-1Mincludesatransmittermodule(PLT101),receivermodule(PLR101),andaplasticfiberopticcable(1meter). Transmittermoduleincorporatesa660nmLEDandaLEDdriver.Receivermoduleincorporatesanintegratedphotodetectorandwidebandwidthdcamplifier.Plasticfi

PLS101

Programmablelogicarrays16횞48횞8

DESCRIPTION ThePLS100(3-State)andPLS101(OpenCollector)arebipolar,fuseProgrammableLogicArrays(PLAs).EachdeviceutilizesthestandardAND/OR/Invertarchitecturetodirectlyimplementcustomsumofproductequations. FEATURES •Field-programmable(Ni-Crlink) •Inputvari