TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP24N03LT is supp

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PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

文件：61.82 Kbytes 页数：7 Pages

PHI

飞利浦

TrenchMOS™ transistor Logic level FET

GENERAL DESCRIPTION\nN-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.\nThe device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.\nThe PHP24N03LT is suppli • ’Trench’ technology\n• Very low on-state resistance\n• Fast switching\n• Stable off-state characteristics\n• High thermal cycling performance\n• Low thermal resistance;

恩XP

恩智浦

TrenchMOS transistor Standard level FET

恩XP

恩智浦