TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

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PHI

飞利浦

TrenchMOS transistor Standard level FET

恩XP

恩智浦

TrenchMOS transistor Logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD24N03LT in SOT428 (D-PAK). Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compati

文件：50.88 Kbytes 页数：8 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD24N03LT in SOT428 (D-PAK). Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compati

文件：50.88 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.44 Kbytes 页数：2 Pages

ISC

无锡固电