TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intend

文件：65.44 Kbytes 页数：8 Pages

PHI

PHI

TrenchMOS™ transistor Standard level FET

GENERAL DESCRIPTION\nN-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended f

恩XP

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

文件：51.49 Kbytes 页数：6 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.23 Kbytes 页数：8 Pages

PHI

PHI

Switching (30V, 13A)

● Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). ● Application Power switching, DC/DC converter. ● Structure Silicon N-channel MOS FET

文件：60.1 Kbytes 页数：4 Pages

ROHM

罗姆