首页 >PH9024A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TLV902xandTLV903xPrecisionComparatorFamily 1Features •1.65Vto5.5Vsupplyrange •Precisioninputoffsetvoltage300μV •Power-onReset(POR)forknownstart-up •Rail-to-Railinputwithfault-tolerance •100nstypicalpropagationdelay •Lowquiescentcurrent16μAperchannel •Lowinputbiascurrent5pA •Open-drainoutputopt | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
900MHztransmitmodulatorand1.3GHzfractional-Nsynthesizer DESCRIPTION Thisspecificationdefinestherequirementsforatransmittermodulatorandfractional–NsynthesizerICtobeusedincellulartelephoneswhichemploytheNorthAmericanDualModeCellularSystem(IS–136). FEATURES •Lowcurrentfrom3.75Vsupply •Lowphasenoise •Mainloopwith | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-channelEnhancementModePowerMOSFET Features VDS=-60V,ID=-20A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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