APC Home Office SurgeArrest 8 Outlets, 120V

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N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher operat

文件：184.08 Kbytes 页数：12 Pages

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N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

文件：299.08 Kbytes 页数：13 Pages

NEXPERIA

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High Voltage Schottky barrier diode

Features ● Low VF ● High Voltage ● Center tap connection Applications ● High frequency operation ● DC-DC converters ● AC adapter

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High Voltage Schottky barrier diode

Features ● Low VF ● High Voltage ● Center tap connection Applications ● High frequency operation ● DC-DC converters ● AC adapter

文件：71.96 Kbytes 页数：3 Pages

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High Voltage Schottky barrier diode

Features ● Low VF ● High Voltage ● Center tap connection Applications ● High frequency operation ● DC-DC converters ● AC adapter

文件：66.58 Kbytes 页数：3 Pages

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High Voltage Schottky barrier diode

Features ● Low VF ● High Voltage ● Center tap connection Applications ● High frequency operation ● DC-DC converters ● AC adapter

文件：68.14 Kbytes 页数：3 Pages

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N-channel TrenchMOS logic level FET

文件：94.58 Kbytes 页数：12 Pages

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N-channel enhancement mode field-effect transistor

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N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET

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