PH6325L

N-channel 25 V 6.3 mΩ logic level MOSFET in LFPAK

1.1Generaldescription LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOSTMtechnology 1.2Featuresandbenefits Lowthermalresistance Lowthresholdvoltage OptimizedforuseinDC-to-DC converters Verylowswitchingandconduction

PH6325L

N-channel TrenchMOS logic level FET

RSD6325FT

1-LineBi-directionalTVSDiode

Features Ultrasmallpackage:1.0x0.6x0.5mm Ultralowcapacitance:15pFtypicalUltralowleakage:nAlevel Lowoperatingvoltage:5V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±3

SFH6325

HighSpeedOptocoupler,DualChannel,1MBd,TransistorOutput

DESCRIPTION TheSFH6325andSFH6326aredualchanneloptocouplers withaGaAIAsinfraredemittingdiode,opticallycoupledwith anintegratedphotodetectorwhichconsistsofaphoto diodeandahigh-speedtransistorinaDIP-8plastic package.Signalscanbetransmittedbetweentwo electric

SFH6325

HighSpeedOptocoupler,DualChannel,1MBd,TransistorOutput

SG-BGA-6325

Ballguidepreventsovercompressionofelastomer

SZN6325

2.4??200VOLTSZENERDIODES

FEATURES: ■HermeticallySealedinGlass ■Ratedat0.5W ■CategoryIIIMetallurgicalBond ■AvailableinAxialandSquareTabSurfaceMount(SMS)version ■AvailabletoTX,TXV,andSpaceLevels2/ ■ZenerVoltage5,2or1Tolerance ■Replacementfor1N6309thru1N6333

UPD6325

QUAD/OCTAL6BITD/ACONVERTERCMOSLSI

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UPD6325

MOSINTEGRATEDCIRCUIT

FEATURES •R-2RladderD/A •SerialDatainput(DATAIN,CLOCK,LOAD) •Powersupplyvoltageofinterfaceis5V(VCC)andD/Areferencevoltageisfree(VCCto15V).

UPD6325C

MOSINTEGRATEDCIRCUIT

FEATURES •R-2RladderD/A •SerialDatainput(DATAIN,CLOCK,LOAD) •Powersupplyvoltageofinterfaceis5V(VCC)andD/Areferencevoltageisfree(VCCto15V).