丝印：7030L；Package：SOT-669；N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

文件：185.7 Kbytes 页数：12 Pages

恩XP

丝印：7030L；Package：SOT-669；N-channel TrenchMOS logic level FET

文件：89.05 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

恩XP

恩智浦

POWER INDUCTOR

●FEATURE 1. Low profile and Compact Size 2. Low DC resistance 3. Open magnetic circuit construction ●APPLICATION 1. LCD panels, DC/DC Converters 2. Digital camera, PDA 3. Portable communication equipment 4. Notebook, Server

文件：605.67 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

REF70 2 ppm/째C Maximum Drift, 0.23 ppmp-p 1/f Noise, Precision Voltage Reference

文件：2.64602 Mbytes 页数：40 Pages

TI

德州仪器

REF70 2 ppm/째C Maximum Drift, 0.23 ppmp-p 1/f Noise, Precision Voltage Reference

文件：2.64635 Mbytes 页数：40 Pages

TI

德州仪器