N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH5330 in SOT669 (LFPAK). Features ■ Logic level compatible ■ Low drive current ■ High-density mounting ■ Very low on-state resistance. Applications ■ DC-to-DC conve

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PHI

飞利浦

N-channel enhancement mode field-effect transistor

恩XP

恩智浦

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher operat

文件：212.84 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

文件：327.87 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世