PINA350CDSIDSGR

INA350CostandSizeOptimized,LowPower,1.8-Vto5.5-VSelectableGainInstrumentationAmplifier

1Features •Idealforsize,cost,andpowerconsciousdesigns •Selectablegainoptions –G=10orG=20(INA350ABS) –G=30orG=50(INA350CDS) •Spacesavingultra-smallpackageoptions –10-pinX2QFN(RUG)–3mm2 –8-pinWSON(DSG)–4mm2 –8-pinSOT23-THN(DDF)–4.64mm2 •Op

PLED350S

PLEDUltraLowHoldingCurrentSeries

Description ThisPLEDultra-lowholdingcurrentseriesexhibitsa lowholdingcurrentparameterthatmakesitcompatible withLEDlightingstrings.Theseriesprovideaswitching electroniccharacteristicsforanfluorescenttube replacementbyanLEDstring.Ithelpstomakethe Fluorescent

PMXB350UPE

20V,P-channelTrenchMOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultrathi

PMZ350UPE

20V,P-channelTrenchMOSFET

PMZ350XN

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOStechnology. 1.2Features 1.3Applications nProfile55lowerthanSOT23nFootprint90smallerthanSOT23 nLowon-stateresistancenLowthresholdvoltage nLeadlesspack

PMZB350UPE

20V,singleP-channelTrenchMOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFE

PSAK350

AC/DCSwitchingPowerSupplies

PSB-350FATX-XE

CostEffectiveCompact1URackmountChassisforHalf-sizeSBC

PSR350

Highpowermetalplateshuntresistorslowohmic>>height>

●Features 1)Perfectforuseembeddedpowermodulebylowheightstructure. 2)Circuitspacecanbesavedbyguaranteedthesameratedpoweras Onesizelargerproduct. 3)Limitingcurrent210A. 4)ROHMresistorshaveobtainedISO9001/IATF16949certification. 5)CorrespondstoAEC-Q200.

PSR350

Highpowermetalplateshuntresistorslow>ohmic>

●Feature 1)Highpowermax15W 2)Ultralowresistancerange(0.1mΩormore). 3)ExcellentTCRcharacteristic 4)Convexstructure 5)ROHMresistorshaveobtainedISO9001/IATF16949certification. 6)CorrespondstoAEC-Q200.