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PINA350CDSIDDFR

INA350CostandSizeOptimized,LowPower,1.8-Vto5.5-VSelectableGainInstrumentationAmplifier

1Features •Idealforsize,cost,andpowerconsciousdesigns •Selectablegainoptions –G=10orG=20(INA350ABS) –G=30orG=50(INA350CDS) •Spacesavingultra-smallpackageoptions –10-pinX2QFN(RUG)–3mm2 –8-pinWSON(DSG)–4mm2 –8-pinSOT23-THN(DDF)–4.64mm2 •Op

TITexas Instruments

德州仪器美国德州仪器公司

PINA350CDSIDSGR

INA350CostandSizeOptimized,LowPower,1.8-Vto5.5-VSelectableGainInstrumentationAmplifier

TITexas Instruments

德州仪器美国德州仪器公司

PINA350CDSIDSGR

INA350CostandSizeOptimized,LowPower,1.8-Vto5.5-VSelectableGainInstrumentationAmplifier

1Features •Idealforsize,cost,andpowerconsciousdesigns •Selectablegainoptions –G=10orG=20(INA350ABS) –G=30orG=50(INA350CDS) •Spacesavingultra-smallpackageoptions –10-pinX2QFN(RUG)–3mm2 –8-pinWSON(DSG)–4mm2 –8-pinSOT23-THN(DDF)–4.64mm2 •Op

TITexas Instruments

德州仪器美国德州仪器公司

PLED350S

PLEDUltraLowHoldingCurrentSeries

Description ThisPLEDultra-lowholdingcurrentseriesexhibitsa lowholdingcurrentparameterthatmakesitcompatible withLEDlightingstrings.Theseriesprovideaswitching electroniccharacteristicsforanfluorescenttube replacementbyanLEDstring.Ithelpstomakethe Fluorescent

Littelfuselittelfuse

力特力特公司

PMXB350UPE

20V,P-channelTrenchMOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultrathi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMZ350UPE

20V,P-channelTrenchMOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMZ350XN

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOStechnology. 1.2Features 1.3Applications nProfile55lowerthanSOT23nFootprint90smallerthanSOT23 nLowon-stateresistancenLowthresholdvoltage nLeadlesspack

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMZB350UPE

20V,singleP-channelTrenchMOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFE

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSAK350

AC/DCSwitchingPowerSupplies

WALL

Wall Industries Inc

PSB-350FATX-XE

CostEffectiveCompact1URackmountChassisforHalf-sizeSBC

ADVANTECHAdvantech Co., Ltd.

研华科技研华科技(中国)有限公司

供应商型号品牌批号封装库存备注价格
HammondPowerSolutions
5
全新原装 货期两周
询价
Hammond Power Solutions
2022+
1
全新原装 货期两周
询价
恩XP
23+
SOT669
50000
全新原装正品现货,支持订货
询价
恩XP
12+
SOT669
200
询价
恩XP
2022+
SOT669
200
原厂原装,假一罚十
询价
恩XP
23+
SOT669
89630
当天发货全新原装现货
询价
恩XP
24+
NA/
7500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
恩XP
22+
SOT669
20000
原装现货,实单支持
询价
ADI
23+
SOT669
8000
只做原装现货
询价
ADI
23+
SOT669
7000
询价
更多PH350PP供应商 更新时间2025-7-28 16:06:00