N-channel enhancement mode field-effect transistor

Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH3230 in SOT669 (LFPAK). Features ■ Logic level compatible ■ Low drive current ■ High density mounting ■ Very low on-state resistance. Applicat

文件：255.38 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

恩XP

N-channel TrenchMOS??logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level compatible ■ Low gate charge ■ High density mounting ■ Very low on-state resistance. Applications ■ DC-to-DC converters ■ Switched-mode power su

文件：97.45 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS intermediate level FET

General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low co

文件：385.14 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS intermediate level FET

1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

文件：486.97 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世