Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：105.25 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：105.25 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor

文件：646.7 Kbytes 页数：4 Pages

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Bipolar

·NPN Silicon Microwave Power Transistors\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n·RoHS Compliant\n·Hermetic Metal/Ceramic P;

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