丝印：PH27；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.20703 Mbytes 页数：46 Pages

TI

德州仪器

丝印：PH27；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.33121 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH27；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.3304 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH27；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.76236 Mbytes 页数：44 Pages

TI

德州仪器

FRD MODULE 270A/200V/trr:150nsec

FEATURES * Isolated Base * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification

文件：30.47 Kbytes 页数：2 Pages

NIEC

Nihon Inter Electronics Corporation

Fast Recovery Diode

FRD 270A Avg 200 Volts

文件：396.85 Kbytes 页数：2 Pages

KSS

京瓷

FRD MODULE 270A/600V/trr:170nsec

FRD MODULE 270A/600V/trr:170nsec FEATURES * Isolated Base * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification

文件：30.27 Kbytes 页数：2 Pages

NIEC

Nihon Inter Electronics Corporation

Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/cerami

文件：108.8 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 110W, 100us Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：157.48 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：107.66 Kbytes 页数：3 Pages

MA-COM