N-channel TrenchMOS ultra low level FET

文件：203.78 Kbytes 页数：12 Pages

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N-channel TrenchMOS logic level FET

文件：104.39 Kbytes 页数：12 Pages

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N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Interfaces directly with low voltage gate drivers\n• Low conduction losses due to low on-state resistance;

Nexperia

安世

二极管/晶闸管模块-普通整流二极管

Kyocera

京瓷

N-channel TrenchMOS ultra low level FET

恩XP

包装：袋 类别：测试与计量 设备 - 环境检测仪 描述：PH ELECTRODE, FLAT SURFACE GLASS

Sensorex

包装：盒 类别：测试与计量 设备 - 环境检测仪 描述：PH ELECTRODE, FLAT SURFACE GLASS

Sensorex