CW Power Transistor 1W, 2.3 GHz

Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors • Gold metalization system • Hermetic metal/Ceramic package

文件：125.21 Kbytes 页数：2 Pages

MA-COM

CW Power Transistor, 1W 2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Hermetic Metal/Ceramic Package

文件：147.29 Kbytes 页数：2 Pages

MACOM

CW Power Transistor,14W 2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Gold Metallization System • Hermetic Metauceramic Package • Diffused Emitter Ballasting Resistors • Internal Input and Output Impedance Matching

文件：148.79 Kbytes 页数：2 Pages

MACOM

CW Power Transistor 14W, 2.3 GHz

Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Gold metallization system • Hermetic metauceramic package • Diffused emitter ballasting resistors • Internal input and output impedance matching

文件：134.78 Kbytes 页数：2 Pages

MA-COM

CW Power Transistor, 3.5W 2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Hermetic MetalCeramic Package

文件：114.39 Kbytes 页数：2 Pages

MACOM

CW Power Transistor 3.5W, 2.3 GHz

Features • NPN Silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors • Gold metalization system • Hermetic metal/ceramic package

文件：125.53 Kbytes 页数：2 Pages

MA-COM

CW Power Transistor, 5W ,2.3 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Hermetic Metal/Ceramic Package

文件：143.14 Kbytes 页数：2 Pages

MACOM

CW Power Transistor 5W, 2.3 GHz

Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors • Gold metalization system • Hermetic metal / ceramic package

文件：124.92 Kbytes 页数：2 Pages

MA-COM

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. ​​​​​​​FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching.

文件：122.4 Kbytes 页数：7 Pages

恩XP

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power Dissipation

文件：401.9 Kbytes 页数：3 Pages

JIANGSU

长电科技