Wireless Bipolar Power Transistor

Features • Designed for linear amplifier applications • Class AB: -33 dBc typ. 3rd IMD at 2 W PEP • Class A: +44 dBm typ. 3rd order intercept point • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

文件：199.88 Kbytes 页数：4 Pages

MA-COM

Wireless Bipolar Power Transistor, 2W 1.6 - 1.7 GHz

Features • Designed for Linear Amplifier Applications • Class AB: -33 dBc Typ. 3rd IMD at 2 Watts PEP • Class A: +44 dBm Typ. 3rd Order Intercept Point • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

文件：283.06 Kbytes 页数：4 Pages

MACOM

Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz

文件：199.88 Kbytes 页数：4 Pages

MACOM

Bipolar

·Designed for Linear Amplifier Applications\n·Diffused Emitter Ballasting Resistor\n·Common Emitter Configuration\n·Class A: +44 dBm typ. 3rd Order Intercept Point\n·Class AB: -33 dBc typ. 3rd IMD at 2 W PEP\n·InternalInput Impedance Matching;

MACOM