Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：146.12 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：52.24 Kbytes 页数：2 Pages

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Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：146.12 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：136.38 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：136.38 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor

文件：656.67 Kbytes 页数：4 Pages

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Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

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