Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：145.52 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 GHz, 2 ms Pulse, 20 Duty

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

文件：238.3 Kbytes 页数：2 Pages

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Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20 Duty

文件：145.52 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor

文件：655.93 Kbytes 页数：4 Pages

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Bipolar

·NPN Silicon Microwave Power Transistors\n·Common Base Configuration\n·Broadband Class C Operation\n·High Efficiency Inter-Digitized Geometry\n·Diffused Emitter Ballasting Resistors\n·Gold Metallization System\n·Internal Input and Output Impedance Matching\n·Hermetic Metal/Ceramic Package\n·RoHS Com;

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