Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common emitter configuration • Broadband Class A operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cer

文件：161.83 Kbytes 页数：2 Pages

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Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Emitter Configuration • Broadband Class A Operation • Matrix Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic~Metal/Ceramic Package

文件：138.66 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20 Duty

Features • NPN Silicon Microwave Power Transistor • Common Emitter Configuration • Broadband Class A Operation • Matrix Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic~Metal/Ceramic Package

文件：161.83 Kbytes 页数：2 Pages

MACOM

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

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