PH1113-100

Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30 Duty

Description M/A-COM’sPH1113-100isasiliconbipolarNPNpowertransistorintendedforuseinL-band1.1-1.3GHzpulsedradars.Designedforcommon-base,classC,broadbandpulsedpowerapplications,thePH1113-100canproduce25wattsofoutputpowerwithshortpulselength(3µS)at30percen

PH1113-100

Radar Pulsed Power Transistor

Features •NPNsiliconmicrowavepowertransistors •Commonbaseconfiguration •BroadbandClassCoperation •Highefficiencyinter-digitizedgeometry •Diffusedemitterballastingresistors •Goldmetallizationsystem •Internalinputandoutputimpedancematching •Hermeticmetal/cerami

PH1113-100

Radar Pulsed Power Transistor 100W, 1.1-1.3 GHz, 3關s Pulse, 30 Duty

PH1113-100

Bipolar; ·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal input and output impedance matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n;

PH1113-100_17

Radar Pulsed Power Transistor