丝印：PGA280A；Package：TSSOP；PGA280 Zerø-Drift, High-Voltage, Programmable Gain Instrumentation Amplifier

1 Features 1• Wide input range: ±15.5 V at ±18-V supply • Binary gain steps: 128V/V to 1/8 V/V • Additional scaling factor: 1 V/V and 1⅜ V/V • Low offset voltage: 3 μV at G = 128 • Near-zero long-term drift of offset voltage • Near-zero gain drift: 0.5 ppm/°C • Excellent linearity: 1.5 ppm

文件：970.86 Kbytes 页数：49 Pages

TI

德州仪器

丝印：PGA280A；Package：TSSOP(PW)；PGA280 Zerø-Drift, High-Voltage, Programmable Gain Instrumentation Amplifier

1 Features 1• Wide input range: ±15.5 V at ±18-V supply • Binary gain steps: 128V/V to 1/8 V/V • Additional scaling factor: 1 V/V and 1⅜ V/V • Low offset voltage: 3 μV at G = 128 • Near-zero long-term drift of offset voltage • Near-zero gain drift: 0.5 ppm/°C • Excellent linearity: 1.5 ppm

文件：974.4 Kbytes 页数：50 Pages

TI

德州仪器

50-150W, 200 to 425VDC Input DC-DC Converters

文件：132.87 Kbytes 页数：2 Pages

TDK

东电化

N-channel UTrenchMOS ultra low level FET

文件：90.1 Kbytes 页数：12 Pages

PHI

PHI

N-channel mTrenchMOS™ ultra low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Low on-state resistance n Low threshold voltage. n Driver circuits n Switching in

文件：208.39 Kbytes 页数：13 Pages

NEXPERIA

安世