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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
UM2106D	文件：2.81601 Mbytes Page：221 Pages	ProductChangeNotification	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
UPG2106	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2106TB	文件：155.75 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@	CEL California Eastern Labs	CEL
UPG2106TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2106TB	文件：247.61 Kbytes Page：14 Pages	GaAsINTEGRATEDCIRCUITS FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
VN2106	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN2106N	文件：472.96 Kbytes Page：5 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VP2106	文件：636.88 Kbytes Page：5 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh	SUTEX Supertex, Inc	SUTEX
VP2106	文件：456.67 Kbytes Page：4 Pages	P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda	SUTEX Supertex, Inc	SUTEX
VP2106	文件：755.93 Kbytes Page：14 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip

供应商	型号	品牌	批号	封装	库存	备注	价格
富凯科技(深圳）有限公司	PG210R	CJ/长电	24+	DO-15	50000	只做原装，欢迎询价，量大价优	询价
深圳市嵩宏达科技有限公司	PG210R	JXND/嘉兴南电	24+	DO-15	50000	全新原装,一手货源,全场热卖!	询价
千层芯半导体(深圳)有限公司	PG211	PREWELL	24+	SMD	5500	长期供应原装现货实单可谈	询价
中天科工半导体（深圳）有限公司	PG211	PREWELL	20+	SOT89	19570	原装优势主营型号-可开原型号增税票	询价
深圳市信佳源电子有限公司	PG211	PREWELL	10+	SOT89	1023	原装/现货	询价
深圳市昂芯微科技有限公司	PG211	PREWELL	23+	SOT89	8678	原厂原装	询价
深圳市威尔健半导体有限公司	PG211	PREWELL	23+	SOT89	50000	全新原装正品现货,支持订货	询价
深圳市赛美科科技有限公司	PG211	PREWELL		NA	5500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市金芯世纪电子有限公司	PG211	PREWELL	22+	SOT-89	100000	代理渠道/只做原装/可含税	询价
深圳市晨豪科技有限公司	PG211	PREWELL	23+	SOT-89	89630	当天发货全新原装现货	询价

更多PG2106供应商更新时间2025-7-21 14:06:00

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