PFVS.210.L资料datasheet下载供应代理硕特-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PFVS.210.L	文件：120.07 Kbytes Page：2 Pages	Axial leaded PTC-Fuses 文件：120.07 Kbytes 页数：2 Pages	SCHURTER 硕特	SCHURTER
PFVS.210.S	文件：120.07 Kbytes Page：2 Pages	Axial leaded PTC-Fuses 文件：120.07 Kbytes 页数：2 Pages	SCHURTER 硕特	SCHURTER
PHN210	文件：109.1 Kbytes Page：7 Pages	Dual N-channel enhancement mode TrenchMOS transistor GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package Applications:- • Motor and relay drivers • d.c. to 文件：109.1 Kbytes 页数：7 Pages	PHI 飞利浦	PHI
PHN210	文件：213.25 Kbytes Page：8 Pages	Dual N-channel enhancement mode TrenchMOSTM transistor FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and relay drivers • 文件：213.25 Kbytes 页数：8 Pages	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA

更多PFVS.210.L供应商更新时间2025-10-7 16:50:00