1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：323.43 Kbytes 页数：15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

文件：323.43 Kbytes 页数：15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time division multiple access

文件：355 Kbytes 页数：10 Pages

TriQuint

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz,

文件：390.98 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS-95

文件：425.44 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体