PF28F1602C3TD70数据手册Intel中文资料规格书

描述 Description

Introduction
This document contains the specifications for the Intel® Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in the following combinations:
• 32-Mbit flash + 8-Mbit SRAM
• 32-Mbit flash + 4-Mbit SRAM
• 16-Mbit flash + 4-Mbit SRAM
• 16-Mbit flash memory + 2-Mbit SRAMProduct Overview
The C3 SCSP device combines flash memory and SRAM into a single package, which provides secure low-voltage memory solutions for portable applications.
The flash memory provides the following features:
• Enhanced security.
• Instant locking/unlocking of any flash block with zero-latency
• A 128-bit protection register that enables unique device identification,
   to meet the needs ofnext generation portable applications.
• Improved 12 V production programming for increased factory throughput.Product

特性 Features

■ Flash Memory Plus SRAM
   —Reduces Memory Board Space
      Required, Simplifying PCB Design
      Complexity
■ SCSP Technology
   —Smallest Memory Subsystem Footprint
   —Area : 8 x 10 mm for 16 Mbit (0.13 µm)
      Flash + 2 Mbit or 4 Mbit SRAM
   —Area : 8 x 12 mm for 32 Mbit (0.13 µm)
      Flash + 4 Mbit or 8 Mbit SRAM
   —Height : 1.20 mm for 16 Mbit (0.13 µm)
      Flash + 2 Mbit or 4 Mbit SRAM, and 32
      Mbit (0.13um) Flash + 8 Mbit SRAM
   —Height : 1.40 mm for 32 Mbit (0.13 µm)
      Flash + 4 Mbit SRAM
   —This Family also includes 0.25 µm, 0.18
      µm, and 0.13 µm technologies
■ Advanced SRAM Technology
   —70 ns Access Time
   —Low Power Operation
   —Low Voltage Data Retention Mode
■ Intel® Flash Data Integrator (FDI) Software
   —Real-Time Data Storage and Code
      Execution in the Same Memory Device
   —Full Flash File Manager Capability
■ Advanced+ Boot Block Flash Memory
   —70 ns Access Time
   —Instant, Individual Block Locking
   —128 bit Protection Register
   —12 V Production Programming
   —Fast Program and Erase Suspend
   —Extended Temperature –25 °C to +85 °C
■ Blocking Architecture
   —Block Sizes for Code + Data Storage
   —4-Kword Parameter Blocks
   —64-Kbyte Main Blocks
   —100,000 Erase Cycles per Block
■ Low Power Operation
   —Asynchronous Read Current: 9 mA (Flash)
   —Standby Current: 7 µA (Flash)
   —Automatic Power Saving Mode
■ Flash Technologies
   —0.25 µm ETOX™ VI, 0.18 µm ETOX™
      VII and 0.13 µm ETOX™ VIII Flash
      Technologies