MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM

文件：183.44 Kbytes 页数：16 Pages

RENESAS

瑞萨

MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Renesas

瑞萨

WIRE FORM FAN GUARD (254mm)

文件：233.02 Kbytes 页数：1 Pages

QUALTEK

Isat is the current at which the inductance drops by 15.

文件：37.03 Kbytes 页数：2 Pages

ICE

MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM 47 Typ at 32.5 dBm for D

文件：140.95 Kbytes 页数：18 Pages

RENESAS

瑞萨