MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM 47 Typ at 32.5 dBm for D

文件：140.95 Kbytes 页数：18 Pages

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MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM

文件：183.44 Kbytes 页数：16 Pages

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MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

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瑞萨

WIRE FORM FAN GUARD (254mm)

文件：233.02 Kbytes 页数：1 Pages

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Isat is the current at which the inductance drops by 15.

文件：37.03 Kbytes 页数：2 Pages

ICE