| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
CircuitModelsforPlasticPackagedMicrowaveDiodes Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GIGABITRJ45LANMAGNETIC | ABRACONAbracon Corporation 阿布雷肯 | ABRACON |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMIS |
15+ |
BGA |
1 |
全新原装正品现货 |
询价 | ||
AMIS |
2339+ |
BGA |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
AMIS |
23+ |
BGA |
9280 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
AMIS |
22+23+ |
BGA |
49570 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
ON/安森美 |
18+ |
BGA |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
1500 |
原装现货 |
询价 | |||||
CYNTEC |
107750 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
CYNTEC |
2320+ |
SMD |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
询价 | ||
CYNTEC-信泰 |
24+25+/26+27+ |
车规-被动器件 |
76800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CYNTEC |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
相关规格书
更多- PETP1002
- PETP1004
- PETP1006
- PETP1008
- PETP1010
- PETP1012
- PETP1014
- PETP1016
- PEV_15
- PEV-1/4-A-SW27-B-OD
- PEV-1/4-B-M12
- PEV-1/4-SC-OD
- PEVA
- PEVA16V101M0506
- PEVA16V271M0807
- PEVA16V470M0506
- PEVA16V680M0604
- PEVA25V220M0604
- PEVA25V470M0606
- PEVA2R5331M0604
- PEVA2R5391M0506
- PEVA2R5561M0606
- PEVA4R0331M0606
- PEVA6R3151M0606
- PEVA6R3221M0604
- PEVA6R3331M0606
- PEV-W-KL-LED-GH
- PE-W10AT001-30
- PE-W10B001
- PE-W10CA001
- PE-W10CP001-10
- PE-W10CP003-10
- PE-W10PS1001
- PE-W10S001-6
- PE-W10TS12001
- PE-W10TS15001
- PE-W10TW1001
- PE-W10TW1003
- PE-W112B002
- PE-W112S001-3
- PE-W112S001-9
- PE-W112SF005-24
- PE-W112SF006-12
- PE-W112SF006-36
- PE-W112TF005-12
相关库存
更多- PETP1003
- PETP1005
- PETP1007
- PETP1009
- PETP1011
- PETP1013
- PETP1015
- PETP1017
- PEV-1/4-A-SW27
- PEV-1/4-B
- PEV-1/4-B-OD
- PEV5
- PEVA10V121M0606
- PEVA16V101M0606
- PEVA16V271M0810
- PEVA16V470M0606
- PEVA25V150M0604
- PEVA25V270M0606
- PEVA2R5331M0506
- PEVA2R5331M0606
- PEVA2R5391M0606
- PEVA4R0221M0606
- PEVA6R3101M0606
- PEVA6R3221M0506
- PEVA6R3221M0606
- PE-VK-5.1
- PEV-W-S-LED-GH
- PE-W10AT5001
- PE-W10B002
- PE-W10CA002
- PE-W10CP001-20
- PE-W10CP003-20
- PE-W10S001-3
- PE-W10TR1001
- PE-W10TS12001A
- PE-W10TS19001
- PE-W10TW1002
- PE-W112B001
- PE-W112S001-12
- PE-W112S001-6
- PE-W112SF005-12
- PE-W112SF005-36
- PE-W112SF006-24
- PE-W112TF005-12
- PE-W112TF005-12_V01
