丝印：AF；Package：DFN1006；BIDIRECTIONAL TVS DIODE

Features Protects one data or power line Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 8A (8/20μs) RoHS Compliant A

文件：1.68996 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：AF；Package：DFN1006；BIDIRECTIONAL TVS DIODE

Features Protects one data or power line Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 8A (8/20μs) RoHS Compliant A

文件：1.64619 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：H2C；Package：DFN1006-2L；Bi-directional 12V Normal Capacitance ESD Protecto r

Description The PESDNC2FD12VBHD2 protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.

文件：598.82 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

Transient Voltage Suppressors for ESD Protection

Description Feature 180W Peak pulse power per line (tP = 8/20μs) DFN1006-2L package Replacement for MLV(0402) Unidirectional configurations Response time is typically

文件：555.15 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD12VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：594.76 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD12VBH protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrica

文件：520.82 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体