丝印：3B；Package：DFN1006；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features Ultra low leakage: nA level Operating voltage: 3.3 V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4A (8/20 μs) RoHS Compliant

文件：337.81 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

Transient Voltage Suppressors for ESD Protection

Description The SXESDLC2FD3V3BH protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electric

文件：647.82 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

Transient Voltage Suppressors for ESD Protection

Description The SXESDNC2FD3V3B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical

文件：457.02 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

Transient Voltage Suppressors for ESD Protection

Description SXESDNC2FD3V3U Feature 50W peak pulse power per line (tP = 8/20μs) DFN1006-2L package Replacement for MLV(0402) Unidirectional configurations Response time is typically

文件：585.26 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体