首页 >PESD3V3S2UT其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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DoubleESDprotectiondiodeinSOT23package 1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodesinSOT23package FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodesinSOT23package DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DoubleESDprotectiondiodeinSOT23package 1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodesinSOT663package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DoubleESDprotectiondiodesinSOT663package 1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
350Wpeakpulsepower(tp=8/20μs) Features 350Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)20A(8/20μs） Applic | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
DoubleESDprotectiondiodesinSOT23package DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2 | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DoubleESDprotectiondiodesinSOT23package FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/20μs •Lowclampingvoltage:V(CL)R=20VatIpp=18A •Ultra-lowreverseleakagecurrent:IRM23kV •IEC61000-4-2;level4(ESD) •IEC61000-4-5(su | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodesinSOT23package | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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