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PESD12VS2UAT

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD12VS2UAT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD12VS2UAT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD12VS2UAT

DoubleESDprotectiondiodesinSOT23package

FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD12VS2UQ

DoubleESDprotectiondiodesinSOT663package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD12VS2UQ

DoubleESDprotectiondiodesinSOT663package

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD12VS2UQ

DoubleESDprotectiondiodesinSOT663package

Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultrasmallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptotwosignallinesfromthedamagecausedbyESDandothertransients. Features ■UnidirectionalE

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD12VS2UQ

DoubleESDprotectiondiodesinSOT663package

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD12VS2UT

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/20μs •Lowclampingvoltage:V(CL)R=20VatIpp=18A •Ultra-lowreverseleakagecurrent:IRM23kV •IEC61000-4-2;level4(ESD) •IEC61000-4-5(su

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD12VS2UT

Solid-statesilicon-avalanchetechnology

Features ■300Wpeakpulsepower(tp=8/20μs) ■Bidirectionalandunidirectionalconfigurations ■Solid-statesilicon-avalanchetechnology ■Lowclampingvoltage ■Lowleakagecurrent ■Lowcapacitance(Cj=60pFtyp.) ■Protectiontwodatalines ■IEC61000-4-2±30kVcontact±30kVair ■

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

PESD12VS2UT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

供应商型号品牌批号封装库存备注价格
YQ
SOT-23
185600
一级代理 原装正品假一罚十价格优势长期供货
询价
NXP-恩智浦
24+25+/26+27+
SOT-23.贴片
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
NXP恩智浦/PHILIPS飞利浦
2008++
SOT-23
12200
新进库存/原装
询价
NXP
16+
SOT23
34300
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
NXP
16+
NA
8800
诚信经营
询价
NXP
1716+
?
8450
只做原装进口,假一罚十
询价
NXP
1742+
SOT23
98215
只要网上有绝对有货!只做原装正品!
询价
NXP
23+
SOT23
8650
受权代理!全新原装现货特价热卖!
询价
NXP
21+
3K/RSOT
12588
原装正品,自己库存 假一罚十
询价
NEXPERIA/安世
23+
SOT23
98000
原装现货假一罚十
询价
更多PESD12VS2BT供应商 更新时间2024-6-23 10:32:00