丝印：Z7；Package：SOT666；NPN/PNP general purpose double transistor

1. General description NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment during soldering due to str

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NEXPERIA

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NPN/PNP general purpose transistors

文件：80.03 Kbytes 页数：12 Pages

PHI

飞利浦

NPN/PNP general purpose transistors

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恩XP

NPN/PNP general purpose transistors

NPN/PNP low VCEsat\n 1 • 300 mW total power dissipation\n• Very small 1.6 x 1.2 mm ultra thin package\n• Self alignment during soldering due to straight leads\n• Low collector capacitance\n• Low VCEsat\n• High current capabilities\n• Improved thermal behaviour due to flat leads\n• Reduced required PCB area\n• Reduced pick;

Nexperia

安世