NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：912 Kbytes 页数：15 Pages

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50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)

1. General description NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces c

文件：280.66 Kbytes 页数：15 Pages

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安世

50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)

1. General description NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD12. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifi

文件：252.27 Kbytes 页数：13 Pages

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GLASS PASSIVATED FAST RECOVERY BRIDGE RECTIFIERS

文件：523.039 Kbytes 页数：2 Pages

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辰达半导体