首页 >PEB1757EIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BCDOUTPUTSYNCHROTODIGITALCONVERTERS | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
SAWTxFilter847MHzLTEBand20SMD1411(30MHzBW) | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SAWFilter847MHz | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE Description ThisproductisDualN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationofnotebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VGS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE Description ThisproductisDualN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationofnotebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VGS | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
DIESETENVELOPEDRAWING | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC |
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