PEB1757E说明书PDF资料原装现货英飞凌第2页-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
UPA1757	文件：227.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPA1757G	文件：227.77 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPA1757G	文件：58.96 Kbytes Page：8 Pages	SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE Description ThisproductisDualN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationofnotebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VGS	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
Y1757	文件：27.68 Kbytes Page：1 Pages	DIESETENVELOPEDRAWING	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

更多PEB1757E供应商更新时间2025-5-10 15:48:00