零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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PE9634 | 75 Ohm F Female to PAL Jack Adapter | PASTERNACKPasternack Enterprises, Inc. 帕斯特纳克 | PASTERNACK | |
12-Bit,170MSPS/210MSPS/250MSPS GENERALDESCRIPTION TheAD9634isa12-bit,analog-to-digitalconverter(ADC)withsamplingspeedsofupto250MSPS.TheAD9634isdesignedtosupportcommunicationsapplicationswherelowcost,smallsize,widebandwidth,andversatilityaredesired. FEATURES SNR=69.7dBFSat185MHzAI | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
1.8VAnalog-to-DigitalConverter | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
SwitchingRegulatorICs | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
PowerMOSFET(Vdss=-250V,Rds(on)=1.0ohm,Id=-4.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinati | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •Advancedprocesstechnology •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •P-channel •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfrom | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET짰PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinati | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SQUIBRESISTANCEMEASUREMENT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
CurrentSenseAmplifierPerformanceComparison | SILABSSilicon Laboratories 芯科科技深圳芯科科技有限公司 | SILABS | ||
1μA,4-BumpUCSP/SOT23,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim | ||
MAXNANOPWRBD#EvaluationKit | MaximMaximIntegrated 美信半导体 | Maxim | ||
ProvenPCBLayout | MaximMaximIntegrated 美信半导体 | Maxim | ||
ProvenPCBLayout | MaximMaximIntegrated 美信半导体 | Maxim | ||
nanoPower,4-BumpUCSP/SOT23,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim | ||
1μA,4-BumpUCSP/SOT23,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim | ||
nanoPower,4-BumpUCSP/SOT23,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim | ||
1μA,4-BumpUCSP/SOT23,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim | ||
1μA,4-BumpUCSP/SOT23,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim |