| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMTPOWERINDUCTORS | pulse Pulse A Technitrol Company | pulse | ||
MONOCHIPTHREEPHASEBIDIRECTIONALKILOWATTHOURMETERINGMODULE DESCRIPTION TheSAMESmonochipthreephasebidirectionalkilowatthourmeteringmodule,thePM9110BF,providesalltherequiredmeteringfunctionsincludingenergymeasurement,a7digitLCDdriver,atariffselectionfacility,anopticalportaswellasapulseoutputforcalibrationpurposes. | SAMES Sames | SAMES | ||
MONOCHIPTHREEPHASEBIDIRECTIONALKILOWATTHOURMETERINGMODULE DESCRIPTION TheSAMESmonochipthreephasebidirectionalkilowatthourmeteringmodule,thePM9110BF,providesalltherequiredmeteringfunctionsincludingenergymeasurement,a7digitLCDdriver,atariffselectionfacility,anopticalportaswellasapulseoutputforcalibrationpurposes. | SAMES Sames | SAMES | ||
PHOTOMULTIPLIERTUBEHighSensitivityandLowerDarkCurrent | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | HAMAMATSU | ||
MONOCHIPTHREEPHASEBIDIRECTIONAL DESCRIPTION TheSAMESSA9110AThreePhasebidirectionalenergymeteringintegratedcircuithasanintegratedLiquidCrystalDisplay(LCD)driverfora7digit(7segment)displayaswellas4multipletariffregisters.TheSA9110Aperformstheactivepowercalculation. FEATURES ■Performsbidir | SAMES Sames | SAMES | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-100V ●LowerRDS(ON):0.912Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-100V ●LowerRDS(ON):0.912Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-100V ●LowerRDS(ON):0.912Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-100V ●LowerRDS(ON):0.912Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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