N-Channel Enhancement Mode Field Effect Transistor

文件：270.86 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode MOSFET

文件：504.54 Kbytes 页数：5 Pages

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

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ESDS552 12-V Bi-Directional Surge Protection Diode in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 24 A (8/20 μs) • IEC 61000-4-2 ESD protection: – ±30-kV contact discharge – ±30-kV air gap discharge • 12 V working voltage • Bidirectional polarity to support positive and negative voltage swings • 2 channel device provides complete ESD/Surg

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ESDS552 12V Bi-Directional Surge Protection Diode in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 12V working voltage • Bidirectional polarity to support positive and negative voltage swings • 2 channel device provides complete ESD/Surge pr

文件：1.00063 Mbytes 页数：15 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

文件：441.58 Kbytes 页数：4 Pages

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