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M63815FP

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63815P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M63815KP

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63815P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M63815P

8-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63815P/FP/KPareeight-circuitSingletransistorarrayswithclampingdiodes.ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Threepackageconfigurations(P,FP,a

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

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