丝印：00111101；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 47 k廓, R2 = open

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144TMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：721.21 Kbytes 页数：12 Pages

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安世

NPN resistor-equipped transistor; R1 = 47 k廓, R2 = open

文件：586.51 Kbytes 页数：11 Pages

PHI

PHI

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW 3DFN

Nexperia USA Inc.

PNP resistor-equipped transistors; R1 = 47 kW-ohm, R2 = open

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpos

文件：91.21 Kbytes 页数：14 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver. DESCRIPTION NPN resistor-equipped transistor (see “Simplif

文件：404.47 Kbytes 页数：15 Pages

NEXPERIA

安世