丝印：-08；Package：SOT-23；NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：50.55 Kbytes 页数：8 Pages

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丝印：-08；Package：SOT-23；NPN resistor-equipped transistors; R1 = 47 k ohm, R2 = 47 k ohm

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：93.77 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：-08；Package：SOT-23；NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：188.97 Kbytes 页数：14 Pages

恩XP

丝印：08；Package：SOT23；NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.53645 Mbytes 页数：17 Pages

NEXPERIA

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丝印：-08；Package：SOT-23；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

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丝印：-08；Package：SOT-23；NPN resistor-equipped transistors

文件：760.42 Kbytes 页数：17 Pages

PHI

飞利浦

丝印：08；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144ET 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces co

文件：227.42 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN resistor-equipped transistors

文件：760.42 Kbytes 页数：17 Pages

PHI

飞利浦

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

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50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTA144ET • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世